Title :
Fab facility restructuring using a high-temperature Al alloy sputtering metallization technique
Author :
Nishimura, Hidctaka ; Yamada, Katsuo ; Takegawa, Kazoyuki ; Imai, Kenji ; Bando, Atsusi ; Ishiguro, Tastuya
Author_Institution :
MOS-LSI Div., Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
In this paper we present an example of a fab facility restructuring project designed to prolong the useful life of a 12-year old fab facility by adopting a high temperature Al alloy sputtering metallization technique. This technique is well known as a cost saving process. However, in almost all cases it is used for via filling. In our fab facility we do not use a W-plug process for contact filling, either. As a result, the process flow is well adjusted as compared to conventional processes. This allowed us to advance from 0.6 micron to 0.35 micron in 18 months, while reducing the investment required for equipment. In addition, this technique does not use gases that contribute to global warming, and thus we have succeed in restructuring our fab facility as an environment-friendly fab line
Keywords :
aluminium alloys; integrated circuit manufacture; integrated circuit metallisation; sputter deposition; 0.35 to 0.6 micron; Al alloy sputtering metallization; cost saving process; environment-friendly fab line; equipment investment reduction; fab facility restructuring; high-temperature sputtering technique; semiconductor manufacturing; Aluminum alloys; Artificial intelligence; Chemical vapor deposition; Costs; Filling; Gases; Metallization; Semiconductor device manufacture; Sputtering; Temperature;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-5403-6
DOI :
10.1109/ISSM.1999.808805
