• DocumentCode
    3368044
  • Title

    First silicon experiments within wafers

  • Author

    Heavlin, William D.

  • Author_Institution
    Adv. Micro Devices Inc., Sunnyvale, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    375
  • Lastpage
    378
  • Abstract
    Typical industrial practice blocks experiments by lot and treats wafers as homogeneous units. This work demonstrates the practical advantages of varying some factors within wafer. The case study involves an advanced microprocessor, the response of greatest interest is speed, and its critical gate lengths are manipulated by exposure changes within wafer. The experiment is constructed using a spatial design criterion and a constrained optimal design algorithm. Data analysis has 3 steps: (a) for each wafer, model the response as a function of both within-wafer factors and (x,y) coordinates. (b) For each wafer and factor level, average over all site coordinates and other factor levels. (c) across wafers, fit a response surface. An example illustrates, and several practical issues are highlighted
  • Keywords
    circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit manufacture; microprocessor chips; silicon; surface fitting; Si; advanced microprocessor; constrained optimal design algorithm; critical gate lengths; exposure changes; factor levels; homogeneous units; response surface; site coordinates; spatial design criterion; within-wafer factors; Algorithm design and analysis; Circuits; Design for experiments; Implants; Ion implantation; Microprocessors; Resists; Response surface methodology; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-5403-6
  • Type

    conf

  • DOI
    10.1109/ISSM.1999.808814
  • Filename
    808814