DocumentCode
3368044
Title
First silicon experiments within wafers
Author
Heavlin, William D.
Author_Institution
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
1999
fDate
1999
Firstpage
375
Lastpage
378
Abstract
Typical industrial practice blocks experiments by lot and treats wafers as homogeneous units. This work demonstrates the practical advantages of varying some factors within wafer. The case study involves an advanced microprocessor, the response of greatest interest is speed, and its critical gate lengths are manipulated by exposure changes within wafer. The experiment is constructed using a spatial design criterion and a constrained optimal design algorithm. Data analysis has 3 steps: (a) for each wafer, model the response as a function of both within-wafer factors and (x,y) coordinates. (b) For each wafer and factor level, average over all site coordinates and other factor levels. (c) across wafers, fit a response surface. An example illustrates, and several practical issues are highlighted
Keywords
circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit manufacture; microprocessor chips; silicon; surface fitting; Si; advanced microprocessor; constrained optimal design algorithm; critical gate lengths; exposure changes; factor levels; homogeneous units; response surface; site coordinates; spatial design criterion; within-wafer factors; Algorithm design and analysis; Circuits; Design for experiments; Implants; Ion implantation; Microprocessors; Resists; Response surface methodology; Semiconductor device modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808814
Filename
808814
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