A novel approach in modeling the diffusion of ion-implanted species during annealing

A novel approach to diffusion modeling of ion implanted species which combines the best features of the two predominant methods of diffusion modeling, physical and empirical, has been used to accurately simulate boron diffusion for a wide range of implant doses and annealing conditions. The Hybrid model is a new approach which accounts for the evolution of point defects as in the physical model while retaining the computational efficiency of the empirical model through the use of a defect concentration dependent dopant effective diffusivity. The dimensionally independent model can account for a wide range of implant conditions and with the use of a single universal set of parameters can be easily implemented into a higher dimensional simulation making high speed 2D and 3D diffusion simulations possible. In addition, a dislocation loop and precipitation model are included for high dose implantation conditions