• DocumentCode
    3368251
  • Title

    A newly developed cooling system using hydrogenated water

  • Author

    Yamazaki, Yoshio ; Yokoi, Ikunori ; Abe, Toshikazu ; Ii, Toshihiro ; Hirayama, Masaki ; Ohmi, Tadahiro

  • Author_Institution
    Dept. of Electr. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    417
  • Lastpage
    420
  • Abstract
    This paper presents the copper oxidation and flowing out characteristics inside copper pipe line, which is a candidate for future cooling water pipe line, with various species of dissolved gases in cooling water. The result reveals that copper oxidation rate in air saturated ultrapure water is much faster than other conditions, whereas its rate in hydrogenated ultrapure water is not differentiated from that in de-aerated ultrapure water. However, the amount of copper flowed out from the pipe surface is drastically reduced by using hydrogenated ultrapure water. The data indicate that copper in neutral pH solution with the oxidation reduction potential (ORP) value of 400 mV such as hydrogenated ultrapure water is perfectly stable for surface oxidation. As a cooling water has many kinds of advantages: it is not necessary to use chemicals as anti-corrosive agents; there is no cooling efficiency degradation by oxidation inside pipe line surface, and a “maintenance-free system” can be realised. A newly developed cooling system using hydrogenated ultrapure water is applicable to other industry facilities as well as semiconductor fabrication with major benefits in terms of the “industrial cost” and “the environmental issues”
  • Keywords
    cooling; environmental factors; integrated circuit economics; oxidation; 400 mV; cooling system; cooling water pipe line; dissolved gases; environmental issues; flowing out characteristics; hydrogenated water; industrial cost; maintenance-free system; oxidation reduction potential; semiconductor fabrication; ultrapure water; Conductivity; Construction industry; Cooling; Copper; Costs; Data engineering; Oxidation; Silicon; Steel; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    0-7803-5403-6
  • Type

    conf

  • DOI
    10.1109/ISSM.1999.808825
  • Filename
    808825