InP-based IC technologies for 100-Gbit/s and beyond

Author

Murata, Koichi ; Sano, Kimikazu ; Enoki, Takatomo ; Sugahara, Hirohiko ; Tokumitsu, Masami

Author_Institution

NTT Photonics Lab., NTT Corp., Kanagawa, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

10

Lastpage

15

Abstract

The research and development of InP-based devices and integrated circuits (ICs) are driven by applications in millimeter-wave wireless and broadband optical fiber communications systems. This paper describes recent progress in our InP-based HEMT and HBT devices, IC and optoelectronic IC (OEIC) technologies, measurement instruments, and discusses technical issues for future 100-Gbit/s class optical communication IC technologies.

Keywords

III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; high-speed integrated circuits; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; optical fibre communication; 100 Gbit/s; HBT devices; InP; InP-based HEMT; OEIC; broadband optical fiber communications systems; integrated circuits; measurement instruments; millimeter-wave wireless communication systems; optical communication IC technologies; optoelectronic IC; Application specific integrated circuits; Broadband communication; Integrated circuit technology; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Optical fiber communication; Photonic integrated circuits; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442599

Filename

1442599