Nanometer-scale imaging of crystal deformation in LSI devices

Author

Ide, Takashi

Author_Institution

Device Anal. Technol. Labs., NEC Corp., Kawasaki, Japan

fYear

1999

fDate

1999

Firstpage

433

Lastpage

436

Abstract

This paper proposes a new method for imaging strain distribution with LSI device resolution. The new technique named Fourier transform mapping (FTM) is demonstrated for a Si/Ge system that is a fundamental strained system. Consequently, it was revealed that 1%-strain can be detected and can be mapped with nanometer-scale resolution. As an example of an application to semiconductor device analysis, investigation of metal-semiconductor interface in a compound semiconductor device is presented

Keywords

Fourier transform spectroscopy; Ge-Si alloys; integrated circuit measurement; large scale integration; semiconductor materials; semiconductor-metal boundaries; strain measurement; Fourier transform mapping; LSI devices; SiGe; compound semiconductor device; crystal deformation; metal-semiconductor interface; nanometer-scale imaging; nanometer-scale resolution; semiconductor device analysis; strain distribution; Capacitive sensors; High-resolution imaging; Large scale integration; Lattices; Nanoscale devices; Semiconductor devices; Spatial resolution; Strain measurement; Stress; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808829

Filename

808829