Title :
4-12 GHz InP HEMT-based MMIC low-noise amplifier
Author :
Limacher, R. ; Auf der Maur, M. ; Meier, H. ; Megej, A. ; Orzati, A. ; Bachtod, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
31 May-4 June 2004
Abstract :
In this paper, we present a monolithically integrated 3-stage low-noise amplifier working in the 4-12 GHz band. The circuit was fabricated on our in-house 0.2 μm InP HEMT process using coplanar waveguide technology. In the band of interest, the fabricated amplifier shows an average noise figure of 1.25 dB and an average gain of 28 dB with a gain ripple of ±2 dB at room temperature. The total dc power consumption of the LNA is 41 mW. At a temperature of 10 K, an average gain of 27 dB and average noise temperature of 13 K was achieved, whereas the dc power consumption was reduced to 5.7 mW.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; integrated circuit noise; power consumption; 0.2 mum; 1.25 dB; 10 K; 13 K; 27 dB; 28 dB; 4 to 12 GHz; 41 mW; 5.7 mW; HEMT-based MMIC low-noise amplifier; InP; coplanar waveguide technology; dc power consumption; monolithically integrated 3-stage low-noise amplifier; Coplanar waveguides; Energy consumption; Gain; HEMTs; Indium phosphide; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise figure; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442603
