4-12 GHz InP HEMT-based MMIC low-noise amplifier

Author

Limacher, R. ; Auf der Maur, M. ; Meier, H. ; Megej, A. ; Orzati, A. ; Bachtod, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2004

fDate

31 May-4 June 2004

Firstpage

28

Lastpage

31

Abstract

In this paper, we present a monolithically integrated 3-stage low-noise amplifier working in the 4-12 GHz band. The circuit was fabricated on our in-house 0.2 μm InP HEMT process using coplanar waveguide technology. In the band of interest, the fabricated amplifier shows an average noise figure of 1.25 dB and an average gain of 28 dB with a gain ripple of ±2 dB at room temperature. The total dc power consumption of the LNA is 41 mW. At a temperature of 10 K, an average gain of 27 dB and average noise temperature of 13 K was achieved, whereas the dc power consumption was reduced to 5.7 mW.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; integrated circuit noise; power consumption; 0.2 mum; 1.25 dB; 10 K; 13 K; 27 dB; 28 dB; 4 to 12 GHz; 41 mW; 5.7 mW; HEMT-based MMIC low-noise amplifier; InP; coplanar waveguide technology; dc power consumption; monolithically integrated 3-stage low-noise amplifier; Coplanar waveguides; Energy consumption; Gain; HEMTs; Indium phosphide; Integrated circuit technology; Low-noise amplifiers; MMICs; Noise figure; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442603

Filename

1442603