A novel IR monitoring system for organic contaminants on 300-mm silicon wafer surfaces

A new infrared (IR) monitoring system has been developed for the detection of organic contaminants on 300 mm silicon wafer surfaces with non-contact, non-destructive, high sensitivity, and real-time capability. IR propagates through the wafer in which the light is internally reflected about 600 times. This enables us to detect an organic contamination on the wafer surface with a sensitivity of below 1×10¹¹ carbon atoms/cm². We demonstrate its performance by monitoring the decomposing process of dioctyl-phthalate (DOP) on the wafer surface by ultraviolet (UV)/ozone cleaning