In-situ monitoring of AlGaInP by reflectance spectroscopy in metalorganic vapor phase epitaxy

Author

Watatani, C. ; Hanamaki, Y. ; Takemi, M. ; Ono, K. ; Mihashi, Y. ; Nishimura, T.

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

44

Lastpage

47

Abstract

We have investigated a real-time reflectance spectroscopy during AlGaInP growth by metalorganic vapor phase epitaxy. The analysis of Fabry-Perot oscillation gives the optical parameters of epitaxial layer such as refractive index (n) and extinction coefficient (k). By using the relationship between these optical parameters and the composition of AlGaInP, in-situ monitoring of growth rate (R_g) and Al content x in (Al_xGa1-x)_0.51In_0.49P is realized without any dependence on the structure. R_g and Al content x estimated by using this in-situ monitoring method are in good agreement with those obtained by conventional measurement such as thickness, XRD and PL spectroscopy.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; extinction coefficients; gallium compounds; indium compounds; reflectivity; refractive index; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; (Al_xGa_1-x)_0.51In_0.49P; Fabry-Perot oscillation; PL spectroscopy; XRD; epitaxial layer; extinction coefficient; growth rate; metalorganic vapor phase epitaxy; real-time reflectance spectroscopy; refractive index; Epitaxial growth; Epitaxial layers; Extinction coefficients; Fabry-Perot; Monitoring; Optical refraction; Optical variables control; Reflectivity; Refractive index; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442607

Filename

1442607