In-situ monitoring of AlGaInP by reflectance spectroscopy in metalorganic vapor phase epitaxy

We have investigated a real-time reflectance spectroscopy during AlGaInP growth by metalorganic vapor phase epitaxy. The analysis of Fabry-Perot oscillation gives the optical parameters of epitaxial layer such as refractive index (n) and extinction coefficient (k). By using the relationship between these optical parameters and the composition of AlGaInP, in-situ monitoring of growth rate (R_g) and Al content x in (Al_xGa1-x)_0.51In_0.49P is realized without any dependence on the structure. R_g and Al content x estimated by using this in-situ monitoring method are in good agreement with those obtained by conventional measurement such as thickness, XRD and PL spectroscopy.