Low threshold operation of MOCVD grown 1.3 μm range GaInNAs triple quantum-well lasers with low N content GaNAs barrier layers

GaInNAs TQW lasers with different barrier materials grown by MOCVD were fabricated to evaluate their characteristics. It was confirmed that the J_th of the lasers with N containing barriers was lower than that of lasers with no N containing barriers. The lowest J_th have been realized with GaAsN (N:0.27 and 0.8%) barriers in GaInNAs lasers. The very low J_th of 120 A/cm²/well for 1.27 μm laser grown with optimized growth condition have been realized with low N containing GaNAs barriers.