Room temperature cw lasing from GaInNAs quantum dots by solid source molecular beam epitaxy

We reported the growth and characterization of GaInNAs self-organized quantum dots grown by solid source molecular beam epitaxy equipped with RF nitrogen plasma source. High-density dots (∼10¹⁰cm²) are formed and dot size dependences on deposition amount and In composition in GaInNAs are observed by atomic force microscopy. Photoluminescence results show that increased deposition thickness caused larger dot height and then redshift of spectrum peak. Oxide-stripe laser with GaInNAs quantum dot active layer was fabricated and RT cw lasing at ∼1.2 μm is observed.