Title :
Room temperature cw lasing from GaInNAs quantum dots by solid source molecular beam epitaxy
Author :
Sun, Z.Z. ; Yoon, S.F. ; Yew, K.C. ; Bo, B.X.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
31 May-4 June 2004
Abstract :
We reported the growth and characterization of GaInNAs self-organized quantum dots grown by solid source molecular beam epitaxy equipped with RF nitrogen plasma source. High-density dots (∼1010cm2) are formed and dot size dependences on deposition amount and In composition in GaInNAs are observed by atomic force microscopy. Photoluminescence results show that increased deposition thickness caused larger dot height and then redshift of spectrum peak. Oxide-stripe laser with GaInNAs quantum dot active layer was fabricated and RT cw lasing at ∼1.2 μm is observed.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; photoluminescence; quantum dot lasers; red shift; self-assembly; semiconductor growth; semiconductor quantum dots; 20 degC; GaInNAs; RF nitrogen plasma source; atomic force microscopy; oxide-stripe laser; photoluminescence; redshift; room temperature cw lasing; self-organized quantum dots; solid source molecular beam epitaxy; Atomic beams; Atomic force microscopy; Molecular beam epitaxial growth; Nitrogen; Plasma sources; Plasma temperature; Quantum dot lasers; Quantum dots; Radio frequency; Solids;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442611