Title :
Static induction type power rectifier
Author :
Yano, Koji ; Henmi, Isao ; Obara, Hideyasu ; Kasuga, Masanobu ; Shimizu, Azuma
Author_Institution :
Yamanashi Univ., Kofu, Japan
Abstract :
For application of a static induction type rectifier to a low voltage power rectifier and a high voltage rectifier, a lateral SOI structure and a P-type channel structure are proposed, respectively. Design methods for these structures are considered by device simulations. The simulations focus on optimization of the thickness of the buried oxide layer for the lateral SOI structure, and on the dosage of the channel for the P-type channel structure, respectively
Keywords :
buried layers; doping profiles; high-voltage techniques; optimisation; power semiconductor diodes; semiconductor device models; silicon-on-insulator; solid-state rectifiers; P-type channel structure; Si-SiO2; buried oxide layer thickness optimization; channel dosage; design methods; device simulations; high voltage rectifier; lateral SOI structure; low voltage power rectifier; static induction type power rectifier; static induction type rectifier; Anodes; Cathodes; Circuits; Design methodology; Electrostatic discharge; Low voltage; P-i-n diodes; PIN photodiodes; Rectifiers; Schottky diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702677
