Title :
Online control of quantum dot laser growth
Author :
Pohl, U.W. ; Kaiander, I. ; Pötschke, K. ; Hopfer, F. ; Zettler, J.T. ; Bimberg, D.
Author_Institution :
Institut fur Festkorperphysik, Technische Univ. Berlin, Germany
fDate :
31 May-4 June 2004
Abstract :
Reflectance anisotropy spectroscopy (RAS) was used to control in-situ the complex MOCVD growth process of both InGaAs/GaAs quantum dots (QDs) and lasers with such QDs in the active region. RAS spectra of complete device runs including the first vertical cavity surface emitting QD laser (QD VCSEL) grown using MOCVD are presented.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser cavity resonators; quantum dot lasers; reflectivity; semiconductor growth; surface emitting lasers; InGaAs-GaAs; MOCVD growth process; QD VCSEL; quantum dot laser growth; reflectance anisotropy spectroscopy; vertical cavity surface emitting QD laser; Anisotropic magnetoresistance; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical control; Quantum dot lasers; Reflectivity; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442614
