Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

Author

Saint-Girons, G. ; Lemaitre, A. ; Navarro-Paredes, V. ; Patriarche, G. ; Rao, E.V.K. ; Sagnes, I. ; Theys, B.

Author_Institution

Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France

fYear

2004

fDate

31 May-4 June 2004

Firstpage

77

Lastpage

80

Abstract

We report here on the efficient use of hydrogenation as a tool to investigate the non-radiative recombination channels in a low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) grown quantum dots (QDs) array emitting around 1.3 μm. It is shown that hydrogenation significantly reduces the flow of charge carriers to non-radiative channels in QDs related to the presence of impurities and further suppresses completely the non-radiative recombinations originating from the stacking faults and dangling bonds. Most importantly, hydrogenation improves the room temperature photoluminescence intensity of the ≈1.3 μm emitting In(Ga)As/GaAs QDs by a factor close to ten.

Keywords

III-V semiconductors; MOCVD; dangling bonds; gallium arsenide; hydrogenation; impurities; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor quantum dots; stacking faults; vapour phase epitaxial growth; 20 degC; InGaAs-GaAs; LP-MOVPE; charge carriers; dangling bonds; hydrogenated quantum dots; impurities; low-pressure metal-organic vapor phase epitaxy; nonradiative recombination channels; photoluminescence; stacking faults; Charge carriers; Epitaxial growth; Gallium arsenide; Impurities; Phased arrays; Photoluminescence; Quantum dots; Radiative recombination; Stacking; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442615

Filename

1442615