Stacking of over 150 layers of InAs quantum dots on InP(311)B substrates

Author

Akahane, Kouichi ; Yamamoto, Naokatsu ; Gozu, Shin-ichiro ; Ohtani, Naoki

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

85

Lastpage

88

Abstract

We fabricated stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-controlled technique, and improved their size uniformity by precisely controlling the composition of the strain-compensating spacer layers. Consequently, we achieved a 150-layer stack of InAs QDs in which the density of the QDs exceeded 5 × 10¹²/cm² which cannot be obtained using conventional techniques for fabricating QDs. In a sample of a 150-layer stack, the QDs showed good size uniformity and an ordered structure. In addition, a strong 1.5 μm photoluminescence emission was observed in this sample at room temperature, which indicates that it would be suitable for fiber-optic communication systems.

Keywords

III-V semiconductors; indium compounds; photoluminescence; semiconductor quantum dots; stacking; 1.5 mum; InAs; InP; fiber-optic communication systems; photoluminescence; quantum dots; stacking; strain-compensating spacer layers; strain-controlled technique; Atomic force microscopy; Capacitive sensors; Optical fiber communication; Photoluminescence; Quantum dot lasers; Quantum dots; Stacking; Substrates; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442617

Filename

1442617