Title :
Growth of GaAsSb/InP heterostructures by OMVPE
Author :
Watkins, S.P. ; Bolognesi, C.R. ; Thewalt, M.L.W. ; Kavanagh, K.L. ; Xu, X.G. ; Matine, N. ; Wang, C.X. ; Liu, J. ; Zhang, X. ; Pitts, O.J. ; Stotz, J.A.H. ; Wiersma, R.D. ; Najmi, B. ; Jiang, W.Y.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
31 May-4 June 2004
Abstract :
This paper summarizes several important aspects of the growth of GaAsSb/InP heterostructures for the fabrication of high speed double heterojunction bipolar transistors (DHBTs). Some of the challenges in OMVPE growth of antimonide/phosphide compounds are discussed, including segregation, interface issues, and control of carbon at very high doping levels. We also discuss the effect of hydrogen passivation and the role of atomic ordering and compositional modulation, including its effect on electrical properties.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; photoluminescence; segregation; semiconductor doping; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; DHBT; GaAsSb-InP; OMVPE; antimonide-phosphide compounds; atomic ordering; carbon; compositional modulation; doping levels; heterostructures; high speed double heterojunction bipolar transistors; hydrogen passivation; segregation; Carbon compounds; Doping; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Hydrogen; Indium phosphide; Inductors; Physics; Solids;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442623
