An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD

Author

Okuno, Y.L. ; DenBaars, Steven P. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

31 May-4 June 2004

Firstpage

114

Lastpage

117

Abstract

We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapour deposition (MOCVD) using metalorganic group-V regents. For both n-type Si-doping and p-type Zn-doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane, and that we can dope both n-type and p-type layers more than 10¹⁹ cm^-3 at the same growth condition. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The as-grown junction showed good current-voltage characteristics and is promising for device applications.

Keywords

III-V semiconductors; MOCVD; annealing; gallium arsenide; indium compounds; semiconductor doping; semiconductor growth; semiconductor junctions; silicon; zinc; (311)B InP substrate; InGaAs:Zn-InP:Si; InP; MOCVD; current-voltage characteristics; doping characteristics; metalorganic chemical vapour deposition; metalorganic group-V regents; tunnel junction; Chemical vapor deposition; Crystalline materials; Doping; Indium gallium arsenide; Indium phosphide; Inductors; MOCVD; Substrates; Surface morphology; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442624

Filename

1442624