Buffer optimization for InP-on-Si [001] quasi-substrates

Author

Khorenko, V. ; Mofor, A.-C. ; Bakin, A. ; Neumann, S. ; Guttzeit, A. ; Wehmann, H.-H. ; Prost, W. ; Schlachetzki, A. ; Tegude, F.J.

Author_Institution

Solid State Electron. Dept., Duisburg Univ., Germany

fYear

2004

fDate

31 May-4 June 2004

Firstpage

118

Lastpage

121

Abstract

Different types of InGaAs/InP(InAlAs) superlattice structures and low temperature grown single InAlAs layers are examined with respect to the defect reduction and improvement of the surface roughness of InP-on-Si [001] quasi-substrates. By using an InAlAs layer grown at optimized conditions a surface roughness of 1.9 nm and a good crystal quality are achieved. Resonant-tunneling diodes fabricated on top of the improved quasi-substrate exhibit a peak-to-valley-ratio of 2 and a peak current density of 27 kA/cm at room temperature showing the high application potential of this approach.

Keywords

III-V semiconductors; aluminium compounds; buffer layers; current density; gallium arsenide; indium compounds; optimisation; resonant tunnelling diodes; semiconductor growth; semiconductor superlattices; surface roughness; InAlAs; InGaAs-InP; InP-Si; buffer optimization; crystal quality; current density; quasisubstrates; resonant-tunneling diodes; superlattice structures; surface roughness; Atomic force microscopy; Indium phosphide; Inductors; Microelectronics; Resonant tunneling devices; Rough surfaces; Semiconductor materials; Substrates; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442625

Filename

1442625