Characterisation and performance of high power packaged devices

Author

Pattison, L. ; Linton, D.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

fYear

1999

fDate

1999

Firstpage

133

Lastpage

138

Abstract

This paper presents a measurement system that combines the capabilities of a vector network analyser, load and source pull and time domain measurement in a single test-bench. The system is based upon the microwave transition analyser (MTA) and a high power test fixture which was designed in-house. The user may optimise the load and source impedance for best desired performance, output power, gain or efficiency. The results achieved using the nonlinear measurement system are detailed, along with the measurement system set up and large-signal calibration

Keywords

MIS devices; calibration; electric impedance; field effect transistors; microwave measurement; microwave power amplifiers; network analysers; semiconductor device testing; time-domain analysis; 1 to 18 GHz; 60 W; GaAs; III V semiconductor; LDMOS device; RF power amplifier matching circuitry; efficiency; gain; high power FET; high power packaged devices; high power test fixture; large-signal calibration; load impedance; load pull; measurement system; measurement system set up; microwave transition analyser; nonlinear measurement system; output power; source impedance; source pull; test-bench; time domain measurement; vector network analyser; wireless base station design; Calibration; Fixtures; Impedance; Microwave devices; Packaging; Performance gain; Power generation; System testing; Time domain analysis; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Frequency Postgraduate Student Colloquium, 1999

Conference_Location

Leeds

Print_ISBN

0-7803-5577-6

Type

conf

DOI

10.1109/HFPSC.1999.809293

Filename

809293