Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices

Author

Paraskevopoulos, A. ; Franke, D. ; Harde, P. ; Gouraud, S. ; Le Pallec, M. ; Lelarge, F. ; Decobert, J.

Author_Institution

Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany

fYear

2004

fDate

31 May-4 June 2004

Firstpage

122

Lastpage

125

Abstract

Planarization of semi-insulating InP by TBCl assisted LP-MOVPE has been achieved on high (> 5 μm) ridges. Full planarization at the whole width between adjacent ridges was obtained for various epitaxial conditions and independent form the ridge form. Fabrication of first modulator devices confirms the high potential of this technique for the development of high-speed optoelectronic components.

Keywords

III-V semiconductors; MOCVD; electro-optical modulation; high-speed optical techniques; indium compounds; iron; planarisation; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; LP-MOVPE; high-speed modulator devices; high-speed optoelectronic components; planarized selective regrowth; tertiarybutylchloride; Diode lasers; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Inductors; Optical device fabrication; Planarization; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442626

Filename

1442626