Title :
Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices
Author :
Paraskevopoulos, A. ; Franke, D. ; Harde, P. ; Gouraud, S. ; Le Pallec, M. ; Lelarge, F. ; Decobert, J.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
fDate :
31 May-4 June 2004
Abstract :
Planarization of semi-insulating InP by TBCl assisted LP-MOVPE has been achieved on high (> 5 μm) ridges. Full planarization at the whole width between adjacent ridges was obtained for various epitaxial conditions and independent form the ridge form. Fabrication of first modulator devices confirms the high potential of this technique for the development of high-speed optoelectronic components.
Keywords :
III-V semiconductors; MOCVD; electro-optical modulation; high-speed optical techniques; indium compounds; iron; planarisation; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; LP-MOVPE; high-speed modulator devices; high-speed optoelectronic components; planarized selective regrowth; tertiarybutylchloride; Diode lasers; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Inductors; Optical device fabrication; Planarization; Surface morphology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442626
