Title :
Suppression of geometric component of charge-pumping current in SOI/MOSFETs
Author :
Li, Yujun ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
31 May-2 Jun 1995
Abstract :
Charge-pumping current in SOI/MOSFETs tends to have a very large geometric component which makes the data analysis very difficult, and thus the technique is not widely adopted for SOI despite its ability to probe both interfaces in small devices. We have systematically analyzed the nature of this parasitic effect, and this paper will introduce a simple method to improve the majority carrier response and effectively suppress this geometric component
Keywords :
MOSFET; SIMOX; electron-hole recombination; ion implantation; minority carriers; SIMOX wafers; SOI MOSFETs; Si; charge-pumping current suppression; geometric component; majority carrier response; parasitic effect; Charge carrier processes; Charge pumps; Data analysis; Electron traps; MOSFETs; Microelectronics; P-i-n diodes; Probes; Semiconductor films; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524651
