Suppression of geometric component of charge-pumping current in SOI/MOSFETs

Author

Li, Yujun ; Ma, T.P.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

144

Lastpage

148

Abstract

Charge-pumping current in SOI/MOSFETs tends to have a very large geometric component which makes the data analysis very difficult, and thus the technique is not widely adopted for SOI despite its ability to probe both interfaces in small devices. We have systematically analyzed the nature of this parasitic effect, and this paper will introduce a simple method to improve the majority carrier response and effectively suppress this geometric component

Keywords

MOSFET; SIMOX; electron-hole recombination; ion implantation; minority carriers; SIMOX wafers; SOI MOSFETs; Si; charge-pumping current suppression; geometric component; majority carrier response; parasitic effect; Charge carrier processes; Charge pumps; Data analysis; Electron traps; MOSFETs; Microelectronics; P-i-n diodes; Probes; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524651

Filename

524651

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3369236