DocumentCode :
3369318
Title :
Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation
Author :
Tametou, M. ; Takebe, M. ; Nakamura, K. ; Paul, N.C. ; Iiyama, K. ; Takamiya, S.
Author_Institution :
Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
187
Lastpage :
190
Abstract :
We fabricated n-channel enhancement/inversion mode GaAs-MISFETs with nm-thin gate insulator, which is formed by oxidizing and nitriding GaAs surface. They have sharper pinch-off than GaAs-MOSFETs. Hysteresis is hardly observed. They showed transconductances of 50 mS/mm (Vth ∼0 V) or 20 mS/mm (Vth ∼1 V) depending on recess-etching time. They are 10 ∼ 100 times higher than those of previously reported devices.
Keywords :
III-V semiconductors; MISFET; electric admittance; etching; gallium arsenide; hysteresis; nitridation; oxidation; GaAs; GaAs-MOSFET; dry oxi-nitridation; gate insulating layers; hysteresis; n-channel enhancement-inversion mode GaAs-MISFET; pinch-off; recess-etching; thin gate insulator; transconductance; Computer aided analysis; Gallium arsenide; High level synthesis; Hysteresis; Insulation; MIS devices; Oxidation; Plasma density; Plasma temperature; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442642
Filename :
1442642
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3369318
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