On the surface stability of UV-cured InP-InGaAs HBTs using polyimide for passivation

Author

Ng, Chai Wah ; Wang, Hong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2004

fDate

31 May-4 June 2004

Firstpage

195

Lastpage

197

Abstract

The stability of UV-cured devices was studied concerning the transient effect. The experimental results indicate that the transient behavior suppressed by UV-irradiation could be re-activated during device operation if the device is operated with high power. The current transient re-activated during the device operation could be directly related to the device self-heating through thermal annealing effect - a significant increase PI trap density as well as the broadening of spatial electron trap distribution in PI annealed at high temperature. Properly design the device structure and layout with better thermal management to ensure a low junction temperature is necessary for PI-passivated InP HBTs.

Keywords

III-V semiconductors; annealing; curing; electron traps; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; stability; ultraviolet radiation effects; InP-InGaAs; UV-cured HBT; device self-heating; passivation; polyimide; spatial electron trap; surface stability; thermal annealing effect; trap density; Annealing; Electron traps; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Plasma temperature; Polyimides; Stability; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442644

Filename

1442644