• DocumentCode
    3369412
  • Title

    100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor

  • Author

    Bhattacharya, U. ; Mondry, M J. ; Hurtz, G. ; Guthrie, J. ; Rodwell, M.J.W. ; Liu, T. ; Nguyen, C. ; Rensch, D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    We report greatly improved transferred-substrate Schottky collector HBTs with fmax of 100 GHz and fτ of 55 GHz. Optimized devices should obtain fmax in excess of 500 GHz
  • Keywords
    Schottky barriers; heterojunction bipolar transistors; millimetre wave bipolar transistors; 100 GHz; 55 GHz; EHF; MM-wave device; heterojunction bipolar transistor; transferred-substrate Schottky-collector HBT; Analog-digital conversion; Bandwidth; Capacitance; Circuits; Conductivity; Contact resistance; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491956
  • Filename
    491956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3369412