DocumentCode :
3369412
Title :
100 GHz transferred-substrate Schottky-collector heterojunction bipolar transistor
Author :
Bhattacharya, U. ; Mondry, M J. ; Hurtz, G. ; Guthrie, J. ; Rodwell, M.J.W. ; Liu, T. ; Nguyen, C. ; Rensch, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
145
Lastpage :
148
Abstract :
We report greatly improved transferred-substrate Schottky collector HBTs with fmax of 100 GHz and fτ of 55 GHz. Optimized devices should obtain fmax in excess of 500 GHz
Keywords :
Schottky barriers; heterojunction bipolar transistors; millimetre wave bipolar transistors; 100 GHz; 55 GHz; EHF; MM-wave device; heterojunction bipolar transistor; transferred-substrate Schottky-collector HBT; Analog-digital conversion; Bandwidth; Capacitance; Circuits; Conductivity; Contact resistance; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.491956
Filename :
491956
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3369412
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