DocumentCode
3369453
Title
Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)
Author
Tan, Chee-Leong ; Wang, Hong ; Radhakrishnan, K. ; Cheong, Wai-Chye ; Bu, Jing
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2004
fDate
31 May-4 June 2004
Firstpage
213
Lastpage
214
Abstract
A simple technique based on the measurement of the transient drain current is demonstrated for quickly assessing the properties of the hot-carrier-induced traps. Two different kinds of interface traps with distinctive time constants have been measured in our present devices.
Keywords
III-V semiconductors; electron traps; high electron mobility transistors; hot carriers; indium compounds; semiconductor device measurement; HEMT; InP; high electron mobility transistors; hot-carrier-induced traps; interface traps; transient drain current; Current measurement; Electric variables measurement; Electron traps; Fabrication; HEMTs; Hot carriers; Indium phosphide; MODFETs; Threshold voltage; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442649
Filename
1442649
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