Title :
Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)
Author :
Tan, Chee-Leong ; Wang, Hong ; Radhakrishnan, K. ; Cheong, Wai-Chye ; Bu, Jing
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
31 May-4 June 2004
Abstract :
A simple technique based on the measurement of the transient drain current is demonstrated for quickly assessing the properties of the hot-carrier-induced traps. Two different kinds of interface traps with distinctive time constants have been measured in our present devices.
Keywords :
III-V semiconductors; electron traps; high electron mobility transistors; hot carriers; indium compounds; semiconductor device measurement; HEMT; InP; high electron mobility transistors; hot-carrier-induced traps; interface traps; transient drain current; Current measurement; Electric variables measurement; Electron traps; Fabrication; HEMTs; Hot carriers; Indium phosphide; MODFETs; Threshold voltage; Time measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442649
