Title :
Modeling and design for beyond-the-die power integrity
Author :
Shi, Yiyu ; He, Lei
Author_Institution :
Electr. & Comput. Eng. Dept., Missouri Univ. of Sci. & Technol., Rolla, MO, USA
Abstract :
Power integrity gains growing importance for integrated circuits in 45nm technology and beyond. This paper provides a tutorial of modeling and design for beyond the die power integrity. We explain the background of simultaneous switching noise (SSN) and its impacts on circuit designs. We discuss various models of different accuracy and complexity for the board, package and chip, and suggest how to select proper ones for board-package-chip co-simulation and co-design of SSN. We then review different design techniques to suppress SSN, including I/O planning and placement, decoupling capacitor allocation, package layer stacking and power/ground plane stapling.
Keywords :
integrated circuit design; integrated circuit modelling; integrated circuit noise; integrated circuit packaging; switches; I/O placement; I/O planning; beyond-the-die power integrity; board-package-chip cosimulation; circuit designs; decoupling capacitor allocation; die power integrity; integrated circuits; package layer stacking; power/ground plane stapling; simultaneous switching noise; size 45 nm; Inductance; Integrated circuit modeling; Load modeling; Noise; Power supplies; Scattering parameters; Switches;
Conference_Titel :
Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-8193-4
DOI :
10.1109/ICCAD.2010.5653721