Title :
Design and fabrication of a 10 Gb/s InGaAs/InP avalanche photodiode (APD) based on the non-local model
Author :
Hwan, Sungmin ; Shim, Jongin ; Eo, Yungsean ; Yang, Seungkee ; Kang, Hwayang ; Jun, Byoungok ; Lee, Doyong ; Jang, Donghoon
Author_Institution :
Dept. of Electron. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fDate :
31 May-4 June 2004
Abstract :
A 10 Gb/s APD is designed and fabricated by using the non-local model. Multiplication layer thickness and 2-dimensional Zn-diffusion profiles are optimized. The gain and bandwidth product (GB) more than 80 GHz, spatially uniform gain distribution, and the dark current less than 1 nA are successfully obtained.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; diffusion; gallium arsenide; indium compounds; optical fabrication; zinc; 10 Gbit/s; 2D Zn-diffusion profiles; InGaAs-InP; avalanche photodiode; dark current; gain-bandwidth product; multiplication layer thickness; nonlocal model; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; Ionization; Laboratories; Optical noise;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442650
