Title :
The effects of semi-insulating current blocking layers on static and dynamic characteristics in direct-modulated semiconductor lasers
Author :
Kim, Dongchurl ; Shim, Jongin ; Eo, Yungseon ; Kang, Joongkoo ; Park, Munkyu ; Jang, Donghoon
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fDate :
31 May-4 June 2004
Abstract :
We have investigated the effects of current blocking layers in 10 Gb/s 1.3 μm DFB lasers in view of the slope efficiency and the modulation bandwidth. It is experimentally shown that the current blocking structure consisting of p-InP(clad)/n-InP/i-InP/n-InP/i-InP/n-InP(sub.) gives a high slope efficiency as well as a large modulation bandwidth of above 10 GHz at 70 °C.
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; iron; optical communication equipment; optical modulation; quantum well lasers; 1.3 mum; 10 Gbit/s; 70 degC; DFB lasers; InP; direct-modulated semiconductor lasers; modulation bandwidth; semiinsulating current blocking layers; slope efficiency; Bandwidth; Capacitive sensors; Diode lasers; Dry etching; Leakage current; Power lasers; Quantum well devices; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442654
