Title :
Fabrication of InGaAsP-InP coupled waveguides loaded with long-period grating for gain equalizing device
Author :
Oishi, Junya ; Abe, Toshitaka ; Tabuchi, Hiromasa ; Utaka, Katsuyuki
Author_Institution :
Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan
fDate :
31 May-4 June 2004
Abstract :
We fabricated coupled waveguides loaded with long-period grating for gain equalizing device using InGaAsP/InP, and we confirmed fundamental transmittance notch characteristics with a center wavelength of 1540 nm and a bandwidth of about 50 nm.
Keywords :
III-V semiconductors; arsenic compounds; diffraction gratings; equalisers; gallium arsenide; gallium compounds; indium compounds; notch filters; optical couplers; optical fabrication; optical filters; optical waveguides; 1540 nm; InGaAsP-InP; coupled waveguides; gain equalizing device; long-period grating; transmittance notch characteristics; Bandwidth; Erbium-doped fiber amplifier; Gratings; Indium phosphide; Loaded waveguides; Optical device fabrication; Optical filters; Optical waveguides; Propagation constant; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442655
