Title :
Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth
Author :
Schilling, M. ; Bouayad-Amine, J. ; Feeser, T. ; Haisch, H. ; Kühn, E. ; Lach, E. ; Satzke, K. ; Weber, J. ; Zielinski, E.
Author_Institution :
Alcatel Telecom Res. Div., Stuttgart, Germany
Abstract :
The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO2 patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths <13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 μm wavelength
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; laser cavity resonators; laser mode locking; laser variables measurement; optical fabrication; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 1.55 mum; 10 Hz; 13 ps; 2 in; 30 mA; 4 mm; 40 Gbit/s; Bragg section; Fourier limit; InGaAsP; InP; InP substrate; LP-MOVPE; MQW layers; MQW technology; OTDM transmission systems; SiO2; active waveguide; bandgap regions; functional sections; gain passive waveguide; intra-cavity electroabsorption modulator; laser cavity; modulator; monolithic mode locked DBR laser; monolithically integrated multiple-segment pulse laser sources; multiple-bandgap MQW structure; optical pulse train; passive waveguide; pulse widths; selected pattern geometry; selective area growth; signal generation; sinusoidal voltage; threshold current; time-bandwidth product; Distributed Bragg reflectors; Geometrical optics; Indium phosphide; Laser mode locking; Optical pulse generation; Optical pulses; Optical waveguides; Pulse measurements; Quantum well devices; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491962
