Title : 
A new Schmitt trigger circuit in a 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals
         
        
            Author : 
Chen, Shih-Lun ; Ker, Ming-Dou
         
        
            Author_Institution : 
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan
         
        
        
        
        
            Abstract : 
A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.
         
        
            Keywords : 
CMOS integrated circuits; elemental semiconductors; integrated circuit noise; low-power electronics; silicon; trigger circuits; 0.13 micron; 1 V; 2.5 V; 3.3 V; CMOS process; Schmitt trigger circuit; Si; high voltage signal; input noise; low voltage devices; mixed voltage I/O interfaces circuit; transition threshold voltages; CMOS process; Circuit noise; Hysteresis; Inverters; Power supplies; Semiconductor device noise; Signal processing; Stress; Threshold voltage; Trigger circuits;
         
        
        
        
            Conference_Titel : 
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
         
        
            Print_ISBN : 
0-7803-8251-X
         
        
        
            DOI : 
10.1109/ISCAS.2004.1329336