Title :
High performance 1200 V PT IGBT with improved short-circuit immunity
Author :
Yun, Chongman ; Kim, Sooseong ; Kwon, Youngdae ; Kim, TaeHoon
Author_Institution :
SamSung Electron. Co. Ltd., Buchon, South Korea
Abstract :
High performance 1200 V punch-through type IGBTs, for which short-circuit immunity is improved, have been designed and fabricated on the silicon direct bonded wafer. An emitter ballast resistance structure is employed to improve the short-circuit immunity. The fabricated IGBTs exhibit a short-circuit time longer than 50 microseconds as well as remarkable DC and AC characteristics such as a Vce,sat of 2.0 V and 90 ns of turn-off time at 125°C. The temperature dependence of the IGBT has a positive coefficient like a nonpunch-through (NPT) type IGBT
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device testing; wafer bonding; 1200 V; 125 C; 2 V; 90 ns; AC characteristics; DC characteristics; IGBT short-circuit time; IGBT temperature dependence; PT IGBT; Si; emitter ballast resistance structure; nonpunch-through type IGBT; punch-through type IGBTs; short-circuit immunity; silicon direct bonded wafer; turn-off time; Buffer layers; Circuit testing; Electronic ballasts; Electrons; Insulated gate bipolar transistors; Silicon; Switching loss; Tail; Voltage; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702683
