DocumentCode :
3369663
Title :
Fabrication of mesa-type InGaAs pin PDs with InP passivation structure on 4-inch diameter InP substrate
Author :
Yamabi, Ryuji ; Tsuji, Yukihiro ; Hiratsuka, Kenji ; Yano, Hiroshi
Author_Institution :
Transmission Device R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
245
Lastpage :
248
Abstract :
We have successfully fabricated mesa-type InGaAs pin PDs with an InP passivation structure on a 4-inch diameter InP substrate. The dark current and capacitance of PDs with 80-μm mesa diameter are 0.278 nA and 335 fF at a reverse bias voltage of 5 V, respectively. A responsivity is 0.91 A/W at an incident light wavelength of 1310 nm. A 3-dB bandwidth for PDs with 80-μm mesa diameter is 7.98 GHz at a reverse bias voltage of 5 V and an incident light wavelength of 1550 nm. The results show that the pin PDs on a 4-inch diameter InP substrate have sufficient characteristics for practical applications.
Keywords :
III-V semiconductors; capacitance; dark conductivity; gallium arsenide; indium compounds; optical fabrication; p-i-n photodiodes; passivation; 0.278 nA; 1310 nm; 1550 nm; 3 dB; 4 inch; 7.98 GHz; 80 mum; InGaAs; InP; InP substrate; capacitance; dark current; epitaxial layer; mesa-type InGaAs pin PDs; passivation structure; Costs; Dark current; Epitaxial layers; Fabrication; Indium gallium arsenide; Indium phosphide; P-n junctions; Passivation; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442659
Filename :
1442659
Link To Document :
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