Title :
Competitive capture of photoexcited carriers in a novel step-graded Inx(Al0.17Ga0.83)1-xAs quantum well heterostructure
Author :
Tadakuma, T. ; Machida, S. ; Satake, A. ; Fujiwara, K. ; Folkenberg, J.R. ; Hvam, J.M.
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
fDate :
31 May-4 June 2004
Abstract :
Photoluminescence (PL) and PL excitation (PLE) spectra of a novel step-graded strained Inx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As multiple-quantum-well heterostructure consisting of five quantum wells with different x values have been investigated. Under indirect barrier excitation conditions a strongly nonuniform PL intensity distribution is observed between the five different wells, while no such difference in PL intensity is found by direct well excitation. PL enhancement and reduction observed for the different wells at the barrier band edge excitation are explained in terms of competitive capture of carriers from the barrier into the five wells.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; hole traps; indium compounds; photoexcitation; photoluminescence; semiconductor quantum wells; Inx(Al0.17Ga0.83)1-xAs-Al0.17Ga0.83As; PL excitation spectra; barrier band edge excitation; barrier excitation; photoexcited carriers capture; photoluminescence; step-graded quantum well heterostructure; Carrier confinement; Gallium arsenide; Laser excitation; Photoluminescence; Power lasers; Power measurement; Quantum well devices; Radiative recombination; Resonance; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442662
