A new dual pumping circuit without body effects for low supply voltage

Author

Hsieh, Ming-chih ; Wang, Zheng-Hong ; Lin, Hongchin ; Lin, Yen-Tai

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan

Volume

2

fYear

2004

fDate

23-26 May 2004

Abstract

The new four-phase 4-stage charge pump to generate up to 3.2 V at 1 V supply voltage even with the threshold voltage up to 0.8 V is proposed. We employed a special dual branch substrate connection technique to eliminate the body effect and avoid p-n junction forward conduction. The two-branch structure also provides more stable output loading current than the conventional one branch structure. The 4-stage charge pumps can boost up to 8.8 V and -7 V using PMOS and NMOS transistors, respectively, at 1.8 V supply voltage in the same triple-well technology. The power efficiency could also reach 50% with loading current of 120 μA.

Keywords

MOSFET; semiconductor device models; 1 V; 1.8 V; 120 muA; NMOS transistors; PMOS transistors; body effect; charge pumps; dual branch substrate connection technique; dual pumping circuit; output loading current; p-n junction forward conduction; power efficiency; Charge pumps; Charge transfer; Circuits; Clocks; Isolation technology; Low voltage; MOSFETs; Nonvolatile memory; P-n junctions; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1329348

Filename

1329348