Title :
4.5 kV IGBT junction termination technique using the SIPOS RESURF structure
Author :
Hori, Shizue ; Tsuchitani, Masanobu ; Oosawa, Akihiko ; Baba, Yoshiro ; Yawata, Shigeo
Author_Institution :
Semicond. Div., Toshiba Micro Electron Center, Japan
Abstract :
In order to obtain high voltage and high reliability devices, the semi-insulating polycrystalline silicon (SIPOS) film and reduced surface field (RESURF) structure are selected from several planar junction termination techniques. A 4.5 kV IGBT was realized using the SIPOS RESURF structure with some optimizations. The termination structure is optimized for high voltage by the RESURF length and the boron ion implantation dosage of the RESURF layer. The SIPOS film is optimized to reduce transient voltage-induced leakage current (TVIC) and to obtain high reliability. As a result, a 5.0 kV static blocking voltage IGBT without TVIC is realized using a 525 μm thickness/450 Ωcm resistivity substrate
Keywords :
doping profiles; electric fields; electrical resistivity; elemental semiconductors; insulated gate bipolar transistors; ion implantation; leakage currents; optimisation; power bipolar transistors; semiconductor device reliability; semiconductor device testing; silicon; surface potential; transient analysis; 4.5 kV; 450 ohmcm; 5 kV; 525 micron; IGBT junction termination technique; RESURF layer; RESURF length; RESURF structure; SIPOS RESURF structure; SIPOS RESURF structure optimization; SIPOS film; SiO2-Si-Si:B; boron ion implantation dosage; high reliability devices; high voltage devices; planar junction termination techniques; reduced surface field structure; resistivity; semi-insulating polycrystalline silicon film; static blocking voltage; substrate thickness; termination structure; transient voltage-induced leakage current; Boron; Degradation; Insulated gate bipolar transistors; Ion implantation; Metalworking machines; Passivation; Semiconductor films; Silicon; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702687
