Title :
Properties of InGaAs-MSM-photodetectors on Si
Author :
Wehmann, H.-H. ; Bartels, A. ; Klockenbrink, R. ; Tang, G.P. ; Peiner, E. ; Schlachetzki, A. ; Malacky, L.
Author_Institution :
Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany
Abstract :
In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on (001)Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor growth; vapour phase epitaxial growth; InGaAs; InGaAs metal-semiconductor-metal photodetectors; InGaAs-MSM-photodetectors; MOVPE; Si; [001]Si substrates; background doping concentration; lattice-matched devices; lattice-mismatched; metal-organic vapour-phase epitaxy; Electrons; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Insulation; Optical buffering; Optical scattering; Photodetectors; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491973
