Properties of InGaAs-MSM-photodetectors on Si

Author

Wehmann, H.-H. ; Bartels, A. ; Klockenbrink, R. ; Tang, G.P. ; Peiner, E. ; Schlachetzki, A. ; Malacky, L.

Author_Institution

Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

207

Lastpage

210

Abstract

In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on (001)Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor growth; vapour phase epitaxial growth; InGaAs; InGaAs metal-semiconductor-metal photodetectors; InGaAs-MSM-photodetectors; MOVPE; Si; [001]Si substrates; background doping concentration; lattice-matched devices; lattice-mismatched; metal-organic vapour-phase epitaxy; Electrons; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Insulation; Optical buffering; Optical scattering; Photodetectors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491973

Filename

491973