DocumentCode :
3370392
Title :
Evaluation of DC and AC performance of junctionless MOSFETs in the presence of variability
Author :
Qian, Xin ; Yang, Yinglin ; Zhu, Zhiwei ; Zhang, Shi-Li ; Wu, Dongping
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear :
2011
fDate :
2-4 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, DC and AC performance of junctionless MOSFETs are extensively examined. A comparison is made between double-gate junctionless MOSFETs and conventional inversion-mode MOSFETs with an emphasis on the variability in performance. Despite clear benefits by eliminating junctions and related junction variabilities, junctionless MOSFETs are found to require double- or multi-gate in order to be fully turned off. They are also significantly more sensitive to variations of channel thickness and channel doping concentration. Though junctionless MOSFETs demonstrate lower driving current and transconductance, they exhibit significantly lower gate capacitances at saturation region and slower degradation of transconductance over gate overdrive.
Keywords :
MOSFET; capacitance; semiconductor doping; AC performance; DC performance; channel doping; channel thickness; double-gate junctionless MOSFET; driving current; gate capacitance; gate overdrive; inversion-mode MOSFET; junction variability; performance variability; saturation region; transconductance degradation; Doping; Junctions; Logic gates; MOSFETs; Performance evaluation; Silicon; AC; DC; MOSFET; double-gate; junctionless; transistor; variability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
ISSN :
Pending
Print_ISBN :
978-1-4244-9019-6
Type :
conf
DOI :
10.1109/ICICDT.2011.5783243
Filename :
5783243
Link To Document :
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