Title :
Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetectors
Author :
Kollakowski, St. ; Kräutle, H. ; Lemm, Ch ; Böttcher, E.H. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
We report on novel waveguide-integrated MSM photodetectors with significantly enlarged coupling efficiency. This is achieved by using a vertically coupled In0.53Al0.31Ga0.16As:Fe buried strip waveguide embedded in InP:Fe. The optical coupling efficiency from the guide into the photo-absorbing InGaAs:Fe was modeled using eigenmode calculations. The simulation results and the experimental data indicate that for an absorber thickness greater than 300 nm a coupling length as short as 15 μm is sufficient for 95% absorption. The high vertical coupling efficiency is obtained without using an additional impedance matching layer
Keywords :
III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; infrared detectors; integrated optics; metal-semiconductor-metal structures; optical communication equipment; optical couplers; optical waveguides; photodetectors; semiconductor device models; 15 mum; 300 nm; IR detectors; InAlGaAs:Fe; InP-InGaAs-InAlGaAs; InP/InGaAs/InAlGaAs MSM photodetectors; InP:Fe; absorber thickness; coupling length; eigenmode calculation; enlarged coupling efficiency; high vertical coupling efficiency; impedance matching layer; optical coupling efficiency; photo-absorbing InGaAs:Fe; simulation results; vertically coupled In0.53Al0.31Ga0.16 As:Fe buried strip waveguide; waveguide-integrated MSM photodetectors; Absorption; Detectors; Impedance matching; Indium gallium arsenide; Indium phosphide; Iron; Optical waveguides; Photodetectors; Refractive index; Strips;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491977
