Title :
New intelligent power multi-chips modules with junction temperature detecting function
Author :
Kajiwara, Tamao ; Yamaguchi, Atsushi ; Hoshi, Yasuyuki ; Sakurai, Kenya
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
A new R-series IGBT-intelligent power module (IGBT-IPM) named the R-IPM has been developed. This R-IPM consists solely of silicon semiconductor chips, called IPMCMs (intelligent power multi-chip modules). The exclusive ICs used in the IPM provide over-temperature protection by directly detecting the junction temperature (Tj) of an IGBT chip. This is a worldwide first. This paper describes the features of the R-IPM and the Tj detecting function technology
Keywords :
bipolar integrated circuits; insulated gate bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit packaging; multichip modules; power bipolar transistors; power integrated circuits; temperature measurement; IGBT chip; IGBT-IPM; IPMCMs; R-IPM; R-series IGBT-intelligent power module; Si; intelligent power multi-chip modules; junction temperature; junction temperature detecting function; junction temperature detecting function technology; over-temperature protection; silicon semiconductor chips; Circuit simulation; Costs; Insulated gate bipolar transistors; Integrated circuit noise; Low pass filters; Power dissipation; Protection; Pulse width modulation; Silicon; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702688
