Title :
Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix
Author :
Liu, Wei-Sheng ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fDate :
31 May-4 June 2004
Abstract :
The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 μm can thus be obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line breadth; 1.3 mum; InAlAs-InGaAs; InAs; composite matrix; photoluminescence linewidth; quantum dots; Capacitive sensors; Gallium arsenide; Indium compounds; Indium gallium arsenide; Land surface temperature; Optical buffering; Photoluminescence; Quantum dot lasers; Quantum dots; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442704
