Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

Author

Lay, T.S. ; Shen, P.P. ; Lin, E.Y. ; Kong, K.M. ; Chen, L.P. ; Wang, J.S. ; Lin, G. ; Chi, J.Y.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

278

Lastpage

280

Abstract

We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm^-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm^-1 of the SQW sample.

Keywords

III-V semiconductors; arsenic compounds; electroabsorption; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoconductivity; semiconductor quantum wells; InGaAsN; differential absorption spectra; double-quantum-well structures; electroabsorption; molecular beam epitaxy; photocurrent; single-quantum-well structures; Absorption; Chirp; Gallium arsenide; Molecular beam epitaxial growth; Optical arrays; Optical materials; Optical surface waves; Photoconductivity; Plasma temperature; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442706

Filename

1442706