DocumentCode
3370706
Title
Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage
Author
Kise, Kahori ; Tomai, Shigekazu ; Yamazaki, Haruka ; Urakawa, Satoshi ; Yano, Koki ; Dapeng Wang ; Furuta, Mamoru ; Horita, Masahiro ; Fujii, Mami ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution
Nara Inst. of Sci. & Technol., Ikoma, Japan
fYear
2015
fDate
1-4 July 2015
Firstpage
249
Lastpage
251
Abstract
Degradation by Joule heating of amorphous metal oxide thin-film transistors is one of the important issues for realizing next-generation displays. To clarify the self-heating degradation mechanism, it is indispensable to analyze the detailed temperature change of TFTs. In this study, we proposed a technique to suppress deterioration caused by self-heating in terms of driving methods, and investigated relation on the temperature change in the degradation mechanism caused by self-heating.
Keywords
amorphous semiconductors; thin film transistors; Joule heating; amorphous metal oxide thin-film transistors; next-generation displays; pulsed bias voltage; self-heating phenomenon; temperature change; Degradation; Heating; Logic gates; Stress; Temperature measurement; Thermal analysis; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2015 22nd International Workshop on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/AM-FPD.2015.7173256
Filename
7173256
Link To Document