Title :
Max and min functions using Multiple-Valued Recharged Semi-Floating Gate circuits
Author :
Gundersen, H. ; Berg, Y.
Author_Institution :
Dept. of Inf., Oslo Univ., Norway
Abstract :
In this paper we present a new proposal for implementing a voltage-mode Multiple-Valued (MV) maximum or minimum function. The circuit has been implemented using Recharged Semi Floating-Gate (SFG) transistors. The benefit with this design is, the proposed circuits can easily be fabricated using a conventional CMOS process. The circuit is suitable for a low power design, Vdd<2 volt. It has high noise margin and good linearity. The simulation results for the proposed circuit are evaluated using AMS 0.35 μm CMOS device parameters.
Keywords :
CMOS logic circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; low-power electronics; mass spectra; multivalued logic circuits; 0.35 micron; AMS; CMOS device parameter; CMOS process; circuit simulation; linearity; low power design; multiple valued recharged semifloating gate circuit; noise margin; recharged semi floating gate transistor; voltage mode multiple valued maximum function; voltage mode multiple valued minimum function; CMOS logic circuits; CMOS process; Capacitors; Circuit noise; Informatics; Logic devices; Proposals; Pulse inverters; Switches; Voltage;
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
DOI :
10.1109/ISCAS.2004.1329407
