Fabrication and characterization of high-uniformity and high-accuracy two-dimensional photonic-crystal slab waveguides on GaAs membranes involving InAs quantum dots

Author

Ikeda, N. ; Sugimoto, Y. ; Tanaka, Y. ; Nakamura, Y. ; Ohkouchi, S. ; Inoue, K. ; Asakawa, K.

Author_Institution

Femtosecond Technol. Res. Assoc., Tsukuba, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

307

Lastpage

310

Abstract

We have successfully fabricated several ultra-small photonic-crystal (PC)-waveguide-based components utilizing single-line-defect in the air-bridge type GaAs PC involving InAs quantum dots. By controlling the Al content of a sacrificial AlGaAs clad layer and the wet etching duration, a PC core layer with a very smooth surface was obtained. An extremely low propagation loss of 0.76 dB/mm was achieved for a GaAs core PC waveguide.

Keywords

III-V semiconductors; aluminium compounds; claddings; etching; gallium arsenide; indium compounds; infrared spectra; light propagation; optical fabrication; optical losses; optical waveguides; photonic crystals; semiconductor quantum dots; AlGaAs; GaAs; InAs; clad layer; propagation loss; quantum dots; two-dimensional photonic-crystal slab waveguides; wet etching; Biomembranes; Gallium arsenide; Optical device fabrication; Optical fiber polarization; Optical waveguides; Photonics; Quantum dots; Slabs; US Department of Transportation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442716

Filename

1442716