DocumentCode :
3370958
Title :
Towards realization of high quality 2D-photonic crystals in InP/GalnAsP/InP
Author :
Anand, S. ; Mulot, M. ; Berrier, A. ; Ferrini, R. ; Houdre, R. ; Kamp, M. ; Forchel, A.
Author_Institution :
Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
311
Lastpage :
313
Abstract :
Two-dimensional photonic crystals (PhCs) were etched into InP/GaInAsP/InP planar waveguides using chlorine based chemical assisted ion beam etching (CAIBE). Etching mechanisms and process parameters crucial for high quality PhC definition are discussed, with special attention to the lag-effect. The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical properties inside the photonic bandgap are much better compared to both previously reported CAIBE results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.
Keywords :
III-V semiconductors; Q-factor; etching; gallium arsenide; gallium compounds; indium compounds; optical fabrication; optical planar waveguides; photonic band gap; photonic crystals; 2D-photonic crystals; InP-GaInAsP-InP; chlorine based chemical assisted ion beam etching; photonic bandgap; planar waveguides; quality factor; two-dimensional photonic crystals; Chemicals; Etching; Indium phosphide; Ion beams; Optical planar waveguides; Optical recording; Optical waveguides; Particle beam optics; Photonic crystals; Planar waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442717
Filename :
1442717
Link To Document :
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