Title :
The study of diffusion barrier layer TiN in Cu/TiN/TiSi2/Si contact system
Author :
Chang, Tzong-Sheng ; Wang, Wen-Churl ; Huang, Fon-Shan
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
31 May-2 Jun 1995
Abstract :
A comparative study of rapid thermal nitridation (RTN) of Ti, reactively-ion-sputtered (RIS), and low pressure chemical-vapor-deposited (LPCVD) TiN thin films as diffusion barriers for Cu/TiN/TiSi2/n+Si contact system has been done. The properties of TiN films were investigated by sheet resistance measurement, X-ray diffraction analysis (XRD), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). The thermal stability of Cu/TiN/TiSi2/n+Si contact system was studied by diode leakage current and contact resistance measurements. The leakage current measurements did not show deterioration of n+ -p diode junction up to 475°C for the RTN and LPCVD TiN diffusion barriers. The RIS TiN film was stable up to 450°C for 30 minutes only, after which Cu started to diffuse into the n+Si substrate. The reasons for the higher thermal stability of RTN and LPCVD TiN compared to RIS TiN can be deduced from the microstructural differences in the three TiN films
Keywords :
Auger effect; VLSI; X-ray diffraction; X-ray photoelectron spectra; chemical vapour deposition; contact resistance; copper; diffusion barriers; elemental semiconductors; integrated circuit measurement; integrated circuit metallisation; leakage currents; nitridation; rapid thermal processing; silicon; sputter deposition; titanium compounds; 0 to 475 degC; 30 min; Auger electron spectroscopy; Cu-TiN-TiSi2-Si; Si; X-ray diffraction analysis; X-ray photoelectron spectroscopy; chemical-vapor-deposited thin films; contact resistance measurements; diffusion barrier layer; diode leakage current; microstructural differences; n+-p diode junction; rapid thermal nitridation; reactively-ion-sputtered thin films; sheet resistance measurement; thermal stability; Chemicals; Current measurement; Diodes; Electrical resistance measurement; Leakage current; Semiconductor thin films; Spectroscopy; Thermal stability; Tin; X-ray diffraction;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524660
