DocumentCode :
3370997
Title :
Electric field effect for eigen states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using photocurrent spectroscopy
Author :
Tanaka, K. ; Kotera, N. ; Nakamura, H.
Author_Institution :
Hiroshima City Univ., Japan
fYear :
2004
fDate :
31 May-4 June 2004
Firstpage :
318
Lastpage :
321
Abstract :
Photocurrents in lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures were measured at room temperature. Steplike structures accentuated by the exciton peaks of interband transitions were observed on photocurrent spectra of the multi-quantum wells structures. The calculated transition energies agreed with the experimental´s on the quantum confined Stark effect. About 5 nm and 9.4 nm quantum wells, the mixing between the valence subbands of the light hole and the heavy hole was observed in the electric field.
Keywords :
III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; excitons; gallium arsenide; indium compounds; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; valence bands; In0.53Ga0.47As-In0.52Al0.48As; eigenstates; electric field effect; exciton peaks; interband transitions; multiquantum wells; photocurrent spectroscopy; quantum confined Stark effect; transition energies; valence subbands; Indium compounds; Indium phosphide; Lattices; PIN photodiodes; Photoconductivity; Photonic band gap; Quantum well devices; Spectroscopy; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8595-0
Type :
conf
DOI :
10.1109/ICIPRM.2004.1442719
Filename :
1442719
Link To Document :
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