• DocumentCode
    3370997
  • Title

    Electric field effect for eigen states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using photocurrent spectroscopy

  • Author

    Tanaka, K. ; Kotera, N. ; Nakamura, H.

  • Author_Institution
    Hiroshima City Univ., Japan
  • fYear
    2004
  • fDate
    31 May-4 June 2004
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    Photocurrents in lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures were measured at room temperature. Steplike structures accentuated by the exciton peaks of interband transitions were observed on photocurrent spectra of the multi-quantum wells structures. The calculated transition energies agreed with the experimental´s on the quantum confined Stark effect. About 5 nm and 9.4 nm quantum wells, the mixing between the valence subbands of the light hole and the heavy hole was observed in the electric field.
  • Keywords
    III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; excitons; gallium arsenide; indium compounds; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; valence bands; In0.53Ga0.47As-In0.52Al0.48As; eigenstates; electric field effect; exciton peaks; interband transitions; multiquantum wells; photocurrent spectroscopy; quantum confined Stark effect; transition energies; valence subbands; Indium compounds; Indium phosphide; Lattices; PIN photodiodes; Photoconductivity; Photonic band gap; Quantum well devices; Spectroscopy; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8595-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2004.1442719
  • Filename
    1442719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3370997