Title :
Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE
Author :
Fastenau, J.M. ; Lubyshev, D. ; Fang, X.-M. ; Doss, C. ; Wu, Y. ; Liu, W.K. ; Bals, S. ; Griffith, Z. ; Kim, Y.M. ; Rodwell, M.J.W.
Author_Institution :
IQE Inc., Bethlehem, PA, USA
fDate :
31 May-4 June 2004
Abstract :
The production of InP-based epiwafers on GaAs substrates by molecular beam epitaxy is achieved through the use of metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP layers. Each M-buffer demonstrates a unique surface morphology and strain relaxation mechanism, as demonstrated by AFM, SEM, and TEM. HEMTs and HBTs were grown on GaAs substrates using the two M-buffers, and their transport properties and dc parameters were compared with baseline structures grown on InP substrates. The structures grown with the InAlAs M-buffer were much closer to the baseline than those grown using the InP M-buffer. Incomplete dislocation filtering in the InP M-buffer may be the source of this degradation.
Keywords :
III-V semiconductors; atomic force microscopy; dislocations; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; surface morphology; transmission electron microscopy; AFM; GaAs; HEMT; InAlAs; InP; MBE; SEM; TEM; dislocation filtering; metamorphic HBT; metamorphic buffers; molecular beam epitaxy; strain relaxation; surface morphology; Capacitive sensors; Filtering; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Production; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442726
