Heat transfer process analysis and simulation of eutectic furnace for high-power LED encapsulation

With the development of electronic information technology, microwave products have been developing towards the trend of high-performance and high-reliability, which leads to higher requirements for the performance of eutectic devices. This paper introduces the entire heat transfer process of the heating chamber of the eutectic furnace, which is used to encapsulate high-power LED chips. And corresponding simulations have been made. It is shown with results of simulation analysis that temperature accuracy of chip substrate is about ±1°C and the highest temperature of outside surface of the heated chamber is at 21°C, which is in line with the design requirements.